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| geometry principal device type cmpdm7002ahc gross die per 6 inch wafer 24,000 process CP379X small signal mosfet transistor n-channel enhancement-mode transistor chip process details die size 31.5 x 31.5 mils die thickness 5.5 mils gate bonding pad area 3.9 x 3.9 mils source bonding pad area 19.3 x 21.3 mils top side metalization al-si - 35,000? back side metalization ti/ni/ag - 2,000?/3,000?/20,000? www.centralsemi.com r0 (20-september 2010)
process CP379X typical electrical characteristics www.centralsemi.com r0 (20-september 2010) |
Price & Availability of CP379X
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